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HAT1127H - Silicon P-Channel Power MOSFET

HAT1127H Description

HAT1127H Silicon P Channel Power MOS FET Power Switching .

HAT1127H Features

* Capable of
* 4.5 V gate drive
* Low drive current
* High density mounting
* Ultra Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS =
* 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1 234 5 D SSS 123 REJ03G1330-0500 Rev.5

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Silicon P-Channel Power MOSFET Renesas Technology
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