Datasheet4U Logo Datasheet4U.com

HAT2205C Silicon N-Channel Power MOSFET

HAT2205C Description

HAT2205C Silicon N Channel MOS FET Power Switching .

HAT2205C Features

* Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V)
* Low drive current.
* High density mounting
* 1.8 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 Data Sheet R07DS1181EJ0500 (Previous: RE

📥 Download Datasheet

Preview of HAT2205C PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • HAT2201RJ - N-Channel 100V MOSFET (VBsemi)
  • HAT200-S - (HAT200-S - HAT1500-S) Current Transducer (LEM)
  • HAT2016R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2019R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2020R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2022R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2024R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2024RJ - Dual N-Channel MOSFET (VBsemi)

📌 All Tags

Silicon N-Channel Power MOSFET Renesas Technology
Renesas Technology HAT2205C-like datasheet