Datasheet4U Logo Datasheet4U.com

HM64YLB36514 - 16M Synchronous Late Write Fast Static RAM

HM64YLB36514 Description

www.DataSheet4U.com HM64YLB36514 Series 16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode) REJ03C0039-0001Z Prelimi.
The HM64YLB36514 is a synchronous fast static RAM organized as 512-kword × 36-bit.

HM64YLB36514 Features

* 2.5 V ± 5% operation and 1.5 V (VDDQ)
* 16M bit density
* Internal self-timed late write
* Byte write control (4 byte write selects, one for each 9-bit)
* Optional ×18 configuration
* HSTL compatible I/O
* Programmable impedance output driver

📥 Download Datasheet

Preview of HM64YLB36514 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • HM64 - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
  • HM640 - N-channel Enhanced VDMOSFET (H&M Semiconductor)
  • HM6400 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
  • HM6401 - P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
  • HM6408 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
  • HM6409 - P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
  • HM6-6617B883 - 2K x 8 CMOS PROM (Intersil Corporation)
  • HM6-6642-9 - 512 x 8 CMOS PROM (Intersil Corporation)

📌 All Tags

16M Synchronous Late Write Fast Static RAM Renesas Technology
Renesas Technology HM64YLB36514-like datasheet