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RJK0455DPB Silicon N Channel Power MOS FET

RJK0455DPB Description

www.DataSheet4U.com To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with R.
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK0455DPB Features

* High speed switching Low drive current Low on-resistance RDS(on) = 3.1 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* High density mounting REJ03G1878-0200 Rev.2.00 Mar 04, 2010 Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4

RJK0455DPB Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Silicon Channel Power MOS FET Renesas Technology
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