RU1HL13L Datasheet - Ruichips

RU1HL13L P-Channel Advanced Power MOSFET

TO252 Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S.

RU1HL13L Features

* -100V/-13A, RDS (ON) =160mΩ(Typ.)@VGS=-10V RDS (ON) =180mΩ(Typ.)@VGS=-4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Po

RU1HL13L Datasheet (305.27 KB)

RU1HL13L Datasheet Preview — Preview of RU1HL13L PDF

Datasheet Details

Part number:

RU1HL13L

Manufacturer:

Ruichips

File Size:

305.27 KB

Description:

P-channel advanced power mosfet.

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RU1HL13L P-Channel Advanced Power MOSFET Ruichips

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