RU3089L Datasheet, Mosfet, Ruichips

RU3089L Features

• Mosfet
• 30V/89A, RDS (ON) =3.8mΩ (Typ.)@VGS=10V RDS (ON) =5mΩ (Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested

PDF File Details

Part number:

RU3089L

Manufacturer:

Ruichips

File Size:

290.64kb

Download:

📄 Datasheet

Description:

N-channel advanced power mosfet. TO-252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-S

RU3089L Application

• Applications
• Switching Application Systems Pin Description TO-252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common

TAGS

RU3089L

Ruichips

📁 Related Datasheet

RU3080L - N-Channel Advanced Power MOSFET (Ruichips)
.

RU3080M - N-Channel Advanced Power MOSFET (Ruichips)
RU3080M N-Channel Advanced Power MOSFET Features • 30V/80A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =3mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design.

RU3081L - N-Channel Advanced Power MOSFET (Ruichips)
RU3081L N-Channel Advanced Power MOSFET MOSFET Features • 30V/90A, RDS (ON) =2.6 mΩ(Typ.)@VGS=10V RDS (ON) =4.3 mΩ(Typ.)@VGS=4.5V • Super High Dense .

RU3081R - N-Channel Advanced Power MOSFET (Ruichips)
RU3081R N-Channel Advanced Power MOSFET MOSFET Features • 30V/100A, RDS (ON) =3 mΩ(Typ.)@VGS=10V RDS (ON) =4.3 mΩ(Typ.)@VGS=4.5V • Super High Dense C.

RU30 - Fast-Recovery Rectifier Diodes (Sanken electric)
.

RU30100L - N-Channel Advanced Power MOSFET (Ruichips)
RU30100L N-Channel Advanced Power MOSFET MOSFET Features • 30V/100A, RDS (ON) =2.2 mΩ(Typ.)@VGS=10V RDS (ON) =4 mΩ(Typ.)@VGS=4.5V • Super High Dense .

RU30100R - N-Channel Advanced Power MOSFET (Ruichips)
RU30100R N-Channel Advanced Power MOSFET MOSFET Features • 30V/110A, RDS (ON) =4 mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=10V • Super High Dense Ce.

RU30105L - N-Channel Advanced Power MOSFET (Ruichips)
RU30105L N-Channel Advanced Power MOSFET MOSFET Features • 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Res.

RU30105R - N-Channel Advanced Power MOSFET (Ruichips)
RU30105R N-Channel Advanced Power MOSFET MOSFET Features • 30V/125A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Res.

RU30106L - N-Channel Advanced Power MOSFET (Ruichips)
RU30106L N-Channel Advanced Power MOSFET MOSFET Features • 30V/130A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V RDS (ON) =5mΩ(Typ.)@VGS=4.5V • Super High Dense Ce.