RU3091M Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU3091M, N-Channel Advanced Power MOSFET

DDDD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large

RU3091M Features

* 30V/90A, RDS (ON) =2.8mΩ(Typ.)@VGS=10V RDS (ON) =3.4mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* Fast Switching Speed

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications