RU30C8H Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU30C8H, N-Channel Advanced Power MOSFET

D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current

RU30C8H Features

* N-Channel 30V/8A, RDS (ON) =12mΩ(Typ.) @ VGS=10V RDS (ON) =16mΩ(Typ.) @ VGS=4.5V

* P-Channel -30V/-7A, RDS (ON) =18mΩ (Typ.) @ VGS=-10V RDS (ON) =25mΩ (Typ.) @ VGS=-4.5V

* Reliable and Rugged

* ESD Protected

* Lead Free and Green Devices Available (RoHS Comp