RU30J30M Datasheet (Ruichips) - Dual N-Channel Advanced Power MOSFET

RU30J30M, Dual N-Channel Advanced Power MOSFET

G2S2 S2 S2 G1D1D1D1 PDFN5 *6 PIN1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Lar

RU30J30M Features

* 30V/30A, RDS (ON) =7mΩ(Typ.)@VGS=10V RDS (ON) =9.5mΩ(Typ.)@VGS=4.5V

* Fast Switching Speed

* Low gate Charge

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Switching Application Systems

* DC/DC