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RU30J30M

Dual N-Channel Advanced Power MOSFET

RU30J30M Features

* 30V/30A, RDS (ON) =7mΩ(Typ.)@VGS=10V RDS (ON) =9.5mΩ(Typ.)@VGS=4.5V

* Fast Switching Speed

* Low gate Charge

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Switching Application Systems

* DC/DC

RU30J30M General Description

G2S2 S2 S2 G1D1D1D1 PDFN5
*6 PIN1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Lar.

RU30J30M Datasheet (413.75 KB)

Preview of RU30J30M PDF

Datasheet Details

Part number:

RU30J30M

Manufacturer:

Ruichips

File Size:

413.75 KB

Description:

Dual n-channel advanced power mosfet.

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RU30J30M Dual N-Channel Advanced Power MOSFET Ruichips

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