RU30L30M - P-Channel Advanced Power MOSFET

Ruichips

RU30L30M Datasheet Preview — Preview of RU30L30M PDF

Datasheet Details

Part number	RU30L30M
Manufacturer	Ruichips
File Size	266.96 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU30L30M-Ruichips.pdf

RU30L30M Product details

Description

PDFN3333 Applications Power Management Load Switching Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation TC=25°C TC=25°C TC=2

Features

-30V/-30A, RDS (ON) =12mΩ(Typ. )@VGS=-10V RDS (ON) =20mΩ(Typ. )@VGS=-4.5V.
Super High Dense Cell Design.
Reliable and Rugged.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Published: Apr 10, 2017 |