RU30L30M3 Datasheet (Ruichips) - P-Channel Advanced Power MOSFET

RU30L30M3, P-Channel Advanced Power MOSFET

PIN1 S SG S D D DDD SDFN3030 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large

RU30L30M3 Features

* -30V/-30A, RDS (ON) =12mΩ(Typ.)@VGS=-10V RDS (ON) =20mΩ(Typ.)@VGS=-4.5V

* Super High Dense Cell Design

* Reliable and Rugged

* 100% Avalanche Tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Power Management

* Lo