RU30L30M3 Datasheet - Ruichips

RU30L30M3 P-Channel Advanced Power MOSFET

PIN1 S SG S D D DDD SDFN3030 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large.

RU30L30M3 Features

* -30V/-30A, RDS (ON) =12mΩ(Typ.)@VGS=-10V RDS (ON) =20mΩ(Typ.)@VGS=-4.5V

* Super High Dense Cell Design

* Reliable and Rugged

* 100% Avalanche Tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Power Management

* Lo

RU30L30M3-Ruichips.pdf

RU30L30M3 Datasheet Preview — Preview of RU30L30M3 PDF

Datasheet Details

Part number:

RU30L30M3

Manufacturer:

Ruichips

File Size:

366.41 KB

Description:

P-channel advanced power mosfet.

RU30L30M3 Distributor

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RU30L30M3 RU30L30M3 P-Channel Advanced Power MOSFET Ruichips