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RU30P4B P-Channel Advanced Power MOSFET

RU30P4B Description

RU30P4B P-Channel Advanced Power MOSFET .
D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-.

RU30P4B Features

* -25V/-4A, RDS (ON) =50mΩ(Typ. )@VGS=-10V RDS (ON) =60mΩ(Typ. )@VGS=-4.5V RDS (ON) =80mΩ(Typ. )@VGS=-2.5V
* Low On-Resistance
* Super High Dense Cell Design
* Reliable and Rugged

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Datasheet Details

Part number
RU30P4B
Manufacturer
Ruichips
File Size
324.53 KB
Datasheet
RU30P4B-Ruichips.pdf
Description
P-Channel Advanced Power MOSFET

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P-Channel Advanced Power MOSFET Ruichips
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