RU30P4B Datasheet (Ruichips) - P-Channel Advanced Power MOSFET

RU30P4B, P-Channel Advanced Power MOSFET

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

RU30P4B Features

* -25V/-4A, RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =60mΩ(Typ.)@VGS=-4.5V RDS (ON) =80mΩ(Typ.)@VGS=-2.5V

* Low On-Resistance

* Super High Dense Cell Design

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Loa