RU30P4B P-Channel Advanced Power MOSFET

Ruichips

Description

RU30P4B P-Channel Advanced Power MOSFET .
D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-.

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Datasheet Specifications

Part number: RU30P4B
Manufacturer: Ruichips
File Size: 324.53 KB
Datasheet: RU30P4B-Ruichips.pdf
Description: P-Channel Advanced Power MOSFET

Features

* -25V/-4A, RDS (ON) =50mΩ(Typ. )@VGS=-10V RDS (ON) =60mΩ(Typ. )@VGS=-4.5V RDS (ON) =80mΩ(Typ. )@VGS=-2.5V
* Low On-Resistance
* Super High Dense Cell Design
* Reliable and Rugged

RU30P4B Distributors

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RU30P4B P-Channel Advanced Power MOSFET Ruichips

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