RU30P4H Datasheet (Ruichips) - P-Channel Advanced Power MOSFET

RU30P4H, P-Channel Advanced Power MOSFET

D D D D G S S pin1 S SOP-8 DDDD (8)(7)(6)(5) G(4) Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Curren

RU30P4H Features

* -30V/-5A, RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =80mΩ(Typ.)@VGS=-4.5V

* Low On-Resistance

* Super High Dense Cell Design

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Power management

* Load swit