RU30P4C6 Datasheet (Ruichips) - P-Channel Advanced Power MOSFET

RU30P4C6, P-Channel Advanced Power MOSFET

S D D G D D SOT23-6 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large He

RU30P4C6 Features

* -30V/-4A, RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =75mΩ(Typ.)@VGS=-4.5V

* Low On-Resistance

* Super High Dense Cell Design

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Load Switch

* DC/DC Convert