RU30P4C6 Datasheet - Ruichips

RU30P4C6 P-Channel Advanced Power MOSFET

S D D G D D SOT23-6 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large He.

RU30P4C6 Features

* -30V/-4A, RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =75mΩ(Typ.)@VGS=-4.5V

* Low On-Resistance

* Super High Dense Cell Design

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Load Switch

* DC/DC Convert

RU30P4C6 Datasheet (324.95 KB)

RU30P4C6 Datasheet Preview — Preview of RU30P4C6 PDF

Datasheet Details

Part number:

RU30P4C6

Manufacturer:

Ruichips

File Size:

324.95 KB

Description:

P-channel advanced power mosfet.

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RU30P4C6 P-Channel Advanced Power MOSFET Ruichips

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