RU30P4C - P-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU30P4C
Manufacturer	Ruichips
File Size	323.66 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU30P4C Datasheet
Additional preview pages of the RU30P4C datasheet.

Product details

Description

D G S SOT23-3 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient

Features

-25V/-4A, RDS (ON) =45mΩ(Typ. )@VGS=-10V RDS (ON) =55mΩ(Typ. )@VGS=-4.5V RDS (ON) =75mΩ(Typ. )@VGS=-2.5V.
Low On-Resistance.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 26, 2016 |