Datasheet4U Logo Datasheet4U.com

RU6888

N-Channel Advanced Power MOSFET

RU6888 Features

* 68V/88A, RDS (ON) =6.0mΩ (Type) @ VGS=10V

* Ultra Low On-Resistance

* Exceptional dv/dt capability

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Available Applications

RU6888 General Description

TO-220 TO-263 TO-220F TO-247 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current.

RU6888 Datasheet (450.07 KB)

Preview of RU6888 PDF

Datasheet Details

Part number:

RU6888

Manufacturer:

Ruichips

File Size:

450.07 KB

Description:

N-channel advanced power mosfet.

📁 Related Datasheet

RU6881R - N-Channel Advanced Power MOSFET (Ruichips)
RU6881R N-Channel Advanced Power MOSFET MOSFET Features • 68V/86A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist.

RU6888M - N-Channel Advanced Power MOSFET (Ruichips)
RU6888M N-Channel Advanced Power MOSFET Features • 60V/62A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Reliable and Rugged • 100% a.

RU6888R - N-Channel Advanced Power MOSFET (Ruichips)
RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab.

RU6888R3 - N-Channel Advanced Power MOSFET (Ruichips)
RU6888R3 N-Channel Advanced Power MOSFET Features • 68V/88A, RDS (ON) =6mΩ(Typ.)@VGS=10V • Insulation Slug(VISO≥1500VAC) • Ultra Low On-Resistance • .

RU6888S - N-Channel Advanced Power MOSFET (Ruichips)
RU6888S N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab.

RU60100R - N-Channel Advanced Power MOSFET (Ruichips)
RU60100R N-Channel Advanced Power MOSFET Features • 60V/130A, RDS (ON) =4mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability .

RU60101R - N-Channel Advanced Power MOSFET (Ruichips)
RU60101R N-Channel Advanced Power MOSFET MOSFET Features • 60V/100A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist.

RU60120R - N-Channel Advanced Power MOSFET (Ruichips)
RU60120R N-Channel Advanced Power MOSFET MOSFET Features • 60V/125A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resi.

TAGS

RU6888 N-Channel Advanced Power MOSFET Ruichips

Image Gallery

RU6888 Datasheet Preview Page 2 RU6888 Datasheet Preview Page 3

RU6888 Distributor