RU6888R Datasheet, MOSFET, Ruichips

RU6888R Features

  • Mosfet
  • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V
  • Ultra Low On-Resistance
  • Exceptional dv/dt capability
  • Fast Switching and Fully Avalanche Rated
  • 1

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Part number:

RU6888R

Manufacturer:

Ruichips

File Size:

298.98kb

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📄 Datasheet

Description:

N-channel advanced power mosfet. TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-So

Datasheet Preview: RU6888R 📥 Download PDF (298.98kb)
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RU6888R Application

  • Applications
  • Switching Application Systems
  • Inverter Systems Pin Description TO-220 N-Channel MOSFET Absolute Maximum Ratings

TAGS

RU6888R
N-Channel
Advanced
Power
MOSFET
Ruichips

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RU6888M - N-Channel Advanced Power MOSFET (Ruichips)
RU6888M N-Channel Advanced Power MOSFET Features • 60V/62A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Reliable and Rugged • 100% a.

RU6888R3 - N-Channel Advanced Power MOSFET (Ruichips)
RU6888R3 N-Channel Advanced Power MOSFET Features • 68V/88A, RDS (ON) =6mΩ(Typ.)@VGS=10V • Insulation Slug(VISO≥1500VAC) • Ultra Low On-Resistance • .

RU6888S - N-Channel Advanced Power MOSFET (Ruichips)
RU6888S N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab.

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RU6881R N-Channel Advanced Power MOSFET MOSFET Features • 68V/86A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist.

RU60100R - N-Channel Advanced Power MOSFET (Ruichips)
RU60100R N-Channel Advanced Power MOSFET Features • 60V/130A, RDS (ON) =4mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability .

RU60101R - N-Channel Advanced Power MOSFET (Ruichips)
RU60101R N-Channel Advanced Power MOSFET MOSFET Features • 60V/100A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist.

RU60120R - N-Channel Advanced Power MOSFET (Ruichips)
RU60120R N-Channel Advanced Power MOSFET MOSFET Features • 60V/125A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resi.

RU60190R - N-Channel Advanced Power MOSFET (Ruichips)
RU60190R N-Channel Advanced Power MOSFET MOSFET Features • 60V/190A, RDS (ON) =3.7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resi.

RU60200R - N-Channel Advanced Power MOSFET (Ruichips)
RU60200R N-Channel Advanced Power MOSFET MOSFET Features • 60V/230A, RDS (ON) =2.5mΩ (Typ.) VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt cap.

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