RU6888R3 Datasheet, Mosfet, Ruichips

RU6888R3 Features

• Mosfet
• 68V/88A, RDS (ON) =6mΩ(Typ.)@VGS=10V
• Insulation Slug(VISO≥1500VAC)
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching

PDF File Details

Part number:

RU6888R3

Manufacturer:

Ruichips

File Size:

470.86kb

Download:

📄 Datasheet

Description:

N-channel advanced power mosfet. Insulation Slug SDG TO220S D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VG

RU6888R3 Application

• Applications
• Switching Application Systems
• Inverter Systems Pin Description Insulation Slug SDG TO220S D G Absolute Maximum Ra

TAGS

RU6888R3

Ruichips

📁 Related Datasheet

RU6888R - N-Channel Advanced Power MOSFET (Ruichips)
RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab.

RU6888 - N-Channel Advanced Power MOSFET (Ruichips)
RU6888 N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6.0mΩ (Type) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capa.

RU6888M - N-Channel Advanced Power MOSFET (Ruichips)
RU6888M N-Channel Advanced Power MOSFET Features • 60V/62A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Reliable and Rugged • 100% a.

RU6888S - N-Channel Advanced Power MOSFET (Ruichips)
RU6888S N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab.

RU6881R - N-Channel Advanced Power MOSFET (Ruichips)
RU6881R N-Channel Advanced Power MOSFET MOSFET Features • 68V/86A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist.

RU60100R - N-Channel Advanced Power MOSFET (Ruichips)
RU60100R N-Channel Advanced Power MOSFET Features • 60V/130A, RDS (ON) =4mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability .

RU60101R - N-Channel Advanced Power MOSFET (Ruichips)
RU60101R N-Channel Advanced Power MOSFET MOSFET Features • 60V/100A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist.

RU60120R - N-Channel Advanced Power MOSFET (Ruichips)
RU60120R N-Channel Advanced Power MOSFET MOSFET Features • 60V/125A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resi.

RU60190R - N-Channel Advanced Power MOSFET (Ruichips)
RU60190R N-Channel Advanced Power MOSFET MOSFET Features • 60V/190A, RDS (ON) =3.7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resi.

RU60200R - N-Channel Advanced Power MOSFET (Ruichips)
RU60200R N-Channel Advanced Power MOSFET MOSFET Features • 60V/230A, RDS (ON) =2.5mΩ (Typ.) VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt cap.