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RU6888M N-Channel Advanced Power MOSFET

RU6888M Description

RU6888M N-Channel Advanced Power MOSFET .
PDFN5060 Applications. Power Management.

RU6888M Features

* 60V/62A, RDS (ON) =7mΩ(Typ. )@VGS=10V
* Super High Dense Cell Design
* Reliable and Rugged
* 100% avalanche tested

RU6888M Applications

* Power Management. Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large He

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Datasheet Details

Part number
RU6888M
Manufacturer
Ruichips
File Size
301.06 KB
Datasheet
RU6888M-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Ruichips
Ruichips RU6888M-like datasheet