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RU6888M

N-Channel Advanced Power MOSFET

RU6888M Features

* 60V/62A, RDS (ON) =7mΩ(Typ.)@VGS=10V

* Super High Dense Cell Design

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Pin Description PDFN5060 Applications

* Power Management. Absolute Maximum R

RU6888M General Description

PDFN5060 Applications

* Power Management. Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Curre.

RU6888M Datasheet (301.06 KB)

Preview of RU6888M PDF

Datasheet Details

Part number:

RU6888M

Manufacturer:

Ruichips

File Size:

301.06 KB

Description:

N-channel advanced power mosfet.

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RU6888M N-Channel Advanced Power MOSFET Ruichips

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