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SW50N06A

N-channel MOSFET

SW50N06A Features

* High ruggedness

* RDS(ON) (Max 0.023Ω)@VGS=10V

* Gate Charge (Typ 36nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-220F TO-220 1 2 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This

SW50N06A General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or ful.

SW50N06A Datasheet (651.74 KB)

Preview of SW50N06A PDF

Datasheet Details

Part number:

SW50N06A

Manufacturer:

SAMWIN

File Size:

651.74 KB

Description:

N-channel mosfet.

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SW50N06A N-channel MOSFET SAMWIN

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