SW50N06T

MOSFET

SEMIPOWER

SW50N06T Features

* High ruggedness

* RDS(ON) (Max 16.8mΩ)@VGS=10V

* Gate Charge (Typ 41nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-252 TO-220 1 2 3 12 3 BVDSS : 60V ID : 50A RDS(ON) : 16.8mΩ 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with a

SW50N06T General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or ful.

SW50N06T Datasheet (707.68 KB)

SW50N06T Datasheet Preview — Preview of SW50N06T PDF

Datasheet Details

Part number:

SW50N06T

Manufacturer:

SEMIPOWER

File Size:

707.68 KB

Description:

Mosfet.

📁 Related Datasheet

SW50N06 N-Channel MOSFET (Sammwin)

SW50N06A N-channel MOSFET (SAMWIN)

SW50N10 MOSFET (SEMIPOWER)

SFI1812ML470A Single Pole Single Throw Normally Open (Albright)

SW5006 15W wireless charging transmitter (ISMARTWARE)

SW50CPF06 Diode (SEMIPOWER)

SW5104 Infrared remote control transmitter circuit (ETC)

SW5106 Wireless charging transmitter fully integrated SOC (ISMARTWARE)

SW5123 RF front-end chip (SILICON wave)

SW51x (SW51x - SW53x) 14 PIN DIP HIGH SPEED SINEWAVE (Connor-Winfield Corporation)

TAGS

SW50N06T MOSFET SEMIPOWER

Image Gallery

SW50N06T Features

SW50N06T General Description

Datasheet Details

File Size:

Description:

SW50N06T Distributor