SW5106
ISMARTWARE
0.98MB
Wireless charging transmitter fully integrated soc. 1 2 bootstrap 2 2 LDO I/O0 I/O1 I/O2 Copyright © 2024, ZHUHAI ISMARTWARE TECHNOLOGY CO., LTD. - 3 - 14 May 20, 202
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z z z z LED z EMC、ESD z CMOS z 2.0 - 5.0V
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(SILICON wave)
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2.4GHz
:2.1 mA; ():1.70 dB; ():12.0 dB; ():1.40 dB; 1dB ():+13.5 dBm; PCB ,
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SW5006 - 15W wireless charging transmitter
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15W Power Stage
15W
1.
SW5006 15W Power Stage , PWM PWM ,,, 。
2.
• • •
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•
15W 3.6~13V
•
PPS/PD3.0/PD2.0 2.
SW50CPF06 - Diode
(SEMIPOWER)
SAMWIN
SW50CPF06
DIODE
Features
■ Ultrafast recovery time ■ Low forward voltage drop ■ 150 °C operating junction temperature ■ Low leakage current .
SW50N06 - N-Channel MOSFET
(Sammwin)
..
SAMWIN
Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 60 V : 0.023ohm : 50 A : 30 nc .
SW50N06A - N-channel MOSFET
(SAMWIN)
SAMWIN
SW50N06A
N-channel MOSFET
BVDSS : 60V ID : 50A RDS(ON) : 0.023ohm
2 2 3 1 3
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■ High ruggedness ■ RDS(ON) (Max 0.023Ω)@VGS=10V ■ Gate .
SW50N06T - MOSFET
(SEMIPOWER)
SAMWIN
SW50N06T
N-channel D-PAK/TO-220 MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 16.8mΩ)@VGS=10V ■ Gate Charge (Typ 41nC) ■ Improved dv/dt C.
SW50N10 - MOSFET
(SEMIPOWER)
SAMWIN
SW50N10
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max17mΩ)@VGS=10V ■ Gate Charge (Typical 82nC) ■ Improved dv/d.