Datasheet4U Logo Datasheet4U.com

SW180N06A

MOSFET

SW180N06A Features

* TO-220

* High ruggedness

* RDS(ON) (Max5.0mΩ)@VGS=10V

* Gate Charge (Typical 133nC)

* Improved dv/dt Capability

* 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology

SW180N06A General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high ef.

SW180N06A Datasheet (716.96 KB)

Preview of SW180N06A PDF

Datasheet Details

Part number:

SW180N06A

Manufacturer:

SEMIPOWER

File Size:

716.96 KB

Description:

Mosfet.

📁 Related Datasheet

SW180N75A N-Channel MOSFET (SEMIPOWER)

SW18CXC950 GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER (PST)

SW18N65D N-channel MOSFET (Samwin)

SW1 1W High Isolation 3kVdc Surface Mount DC-DC Converter (Superworld Electronics)

SW10-0312 GaAs SPDT Reflective Switch (Tyco)

SW10-0313 Matched GaAs SPDT Switch (Tyco)

SW100N03 N-channel MOSFET (SAMWIN)

SW100N10 MOSFET (SEMIPOWER)

SW100N10A MOSFET (SEMIPOWER)

SW100N10B MOSFET (SEMIPOWER)

TAGS

SW180N06A MOSFET SEMIPOWER

Image Gallery

SW180N06A Datasheet Preview Page 2 SW180N06A Datasheet Preview Page 3

SW180N06A Distributor