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SW10N60D

MOSFET

SW10N60D Features

* High ruggedness

* RDS(ON) (Max 1.1Ω)@VGS=10V

* Gate Charge (Typical 35nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-220F 1 23 BVDSS : 600V ID : 10A RDS(ON) : 1.1Ω 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS

SW10N60D General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or ful.

SW10N60D Datasheet (649.65 KB)

Preview of SW10N60D PDF

Datasheet Details

Part number:

SW10N60D

Manufacturer:

SEMIPOWER

File Size:

649.65 KB

Description:

Mosfet.

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SW10N60D MOSFET SEMIPOWER

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