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SW10N60K

N-channel MOSFET

SW10N60K Features

* High ruggedness

* RDS(ON) (Max 0.5Ω)@VGS=10V

* Gate Charge (Typical 26nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-220F 1 2 3 BVDSS : 600V ID : 10.0A RDS(ON) : 0.5ohm 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced s

SW10N60K General Description

This power MOSFET is produced with advanced super-junction technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fasts witching time, excellent avalanche characteristics, low gate charge and especially in low on resistance. It is mainly suitable for half b.

SW10N60K Datasheet (374.81 KB)

Preview of SW10N60K PDF

Datasheet Details

Part number:

SW10N60K

Manufacturer:

SAMWIN

File Size:

374.81 KB

Description:

N-channel mosfet.

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TAGS

SW10N60K N-channel MOSFET SAMWIN

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