SW12N60 - N-channel MOSFET

SAMWIN

Datasheet Details

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

High ruggedness.
RDS(ON) (Max 0.7 Ω)@VGS=10V.
Gate Charge (Typ 58nC).
Improved dv/dt Capability.
100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID 1 2 1 3 2 : 12.0A RDS(ON) : 0.7ohm 3 2 1. Gate 2. Drain 3. Source General.

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Published: Nov 30, 2013 |