SW10N60

N-channel MOSFET

SAMWIN

SW10N60 Features

* High ruggedness

* RDS(ON) (Max 0.75Ω)@VGS=10V

* Gate Charge (Typ 37nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-220F TO-220 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology e

SW10N60 General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or ful.

SW10N60 Datasheet (874.68 KB)

SW10N60 Datasheet Preview — Preview of SW10N60 PDF

Datasheet Details

Part number:

SW10N60

Manufacturer:

SAMWIN

File Size:

874.68 KB

Description:

N-channel mosfet.

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SW10N60 N-channel MOSFET SAMWIN

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SW10N60 Features

SW10N60 General Description

Datasheet Details

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Description:

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