SW10N65K
SEMIPOWER
1.30MB
N-channel mosfet. 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced super junction technology of SAMWIN. ID : 10A RDS(ON) :0.
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SW10N65 - N-channel MOSFET
(SAMWIN)
SW10N65
N-channel Enhanced mode TO-220F/TO-220 MOSFET
Features
TO- 220F
TO-220
High ruggedness Low RDS(ON) (Typ 1Ω)@VGS=10V Low Gate Charge.
SW10N60 - N-channel MOSFET
(SAMWIN)
SAMWIN
SW10N60
N-channel MOSFET
BVDSS : 600V ID : 10.0A RDS(ON) : 0.75ohm
1 2 1 3 2 2 3 1 3
Features
■ High ruggedness ■ RDS(ON) (Max 0.75Ω)@VGS=10V.
SW10N60D - MOSFET
(SEMIPOWER)
SAMWIN
SW10N60D
N-channel TO-220F MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.1Ω)@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capa.
SW10N60K - N-channel MOSFET
(SAMWIN)
SAMWIN
SW10N60K
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.5Ω)@VGS=10V ■ Gate Charge (Typical 26nC) ■ Improved dv/dt Capability ■.
SW10-0312 - GaAs SPDT Reflective Switch
(Tyco)
GaAs SPDT Reflective Switch, DC - 3 GHz with TTL/CMOS Control Input
V 5.00
SW10-0312
Features
n Integral TTL Driver n Low DC Power Consumption n Su.
SW10-0313 - Matched GaAs SPDT Switch
(Tyco)
Matched GaAs SPDT Switch, DC - 3 GHz with TTL/CMOS Control Input
V 4.00
SW10-0313
Features
n Integral TTL Driver n Low DC Power Consumption n Surfa.
SW100N03 - N-channel MOSFET
(SAMWIN)
SAMWIN
SW100N03
N-channel MOSFET
Features
TO-220 TO-251 TO-252 TO-263
■ High ruggedness
■ RDS(ON) (Max 5.3mΩ)@VGS=10V ■ Gate Charge (Typical 69n.
SW100N10 - MOSFET
(SEMIPOWER)
SAMWIN
SW100N10
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max 11mΩ)@VGS=10V ■ Gate Charge (Typical 109nC) ■ Improved d.
SW100N10A - MOSFET
(SEMIPOWER)
SAMWIN
SW100N10A
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max 7.4m Ω)@VGS=10V ■ Gate Charge (Typ 127nC) ■ Improved dv.
SW100N10B - MOSFET
(SEMIPOWER)
SAMWIN
SW100N10B
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max 10.5m Ω)@VGS=10V ■ Gate Charge (Typ 106nC) ■ Improved d.
