SW80N08A
SEMIPOWER
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Mosfet. This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteri
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SW80N08B - MOSFET
(SEMIPOWER)
SAMWIN
SW80N08B
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max8.5mΩ)@VGS=10V ■ Gate Charge (Typical 72nC) ■ Improved dv.
SW830 - N-Channel MOSFET
(SAMWIN)
..
SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.4.
SW830A - N-channel MOSFET
(SAMWIN)
SAMWIN
SW830A
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Improved dv/dt Capability ■ 100% .
SW840 - N-Channel MOSFET
(SAMWIN)
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SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 0.8.
SW840A - N-channel MOSFET
(SAMWIN)
SAMWIN
Features
■ High ruggedness ■ RDS(ON) (Max 0.85Ω)@VGS=10V ■ Gate Charge (Typ 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220
S.
SW8600 - Built-in high-voltage MOSFET
(SAMWIN)
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SW8601 - Built-in high-voltage MOSFET
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SW8603 - Built-in high-voltage MOSFET
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SW8604 - Built-in high-voltage MOSFET
(SAMWIN)
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SW88N60K2 - N-channel MOSFET
(Samwin)
SW88N60K2
N-channel Enhanced mode TO-247 MOSFET
Features
TO-247
⚫ High ruggedness
⚫ Low RDS(ON) (Typ 24mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 188nC)
.