SW840
SAMWIN
269.54kb
N-channel mosfet. Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 0.85 ohm : 8.5 A : 36 nc : 125 W
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SW840A - N-channel MOSFET
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SAMWIN
Features
■ High ruggedness ■ RDS(ON) (Max 0.85Ω)@VGS=10V ■ Gate Charge (Typ 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220
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SW80N08A - MOSFET
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SAMWIN
SW80N08A
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max9.2mΩ)@VGS=10V ■ Gate Charge (Typical 82nC) ■ Improved dv.
SW80N08B - MOSFET
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N-channel TO-220 MOSFET
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■ High ruggedness ■ RDS(ON) (Max8.5mΩ)@VGS=10V ■ Gate Charge (Typical 72nC) ■ Improved dv.
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SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.4.
SW830A - N-channel MOSFET
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SAMWIN
SW830A
N-channel MOSFET
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■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Improved dv/dt Capability ■ 100% .
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⚫ Low RDS(ON) (Typ 24mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 188nC)
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