SW8N60D
Samwin
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N-channel mosfet. 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFE
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SW8N60 - N-channel MOSFET
(SAMWIN)
SAMWIN
SW8N60
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.3 Ω)@VGS=10V ■ Gate Charge (Typ 38nC) ■ Improved dv/dt Capability ■ 100% .
SW8N65D - N-channel MOSFET
(Samwin)
SW8N65D
N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET
Features
TO-220 TO-251 TO-252 TO-220F TO-251NX
High ruggedness
Lo.
SW8N65DB - N-channel MOSFET
(Samwin)
SW8N65DB
N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET
Features
TO-251 TO-252 TO-220F TO-262N
High ruggedness
Low RDS(ON) (Typ.
SW8N65K - N-channel MOSFET
(Samwin)
SW8N65K
N-channel Enhanced mode TO-262 MOSFET
Features
High ruggedness Low RDS(ON) (Typ 0.53Ω)@VGS=10V Low Gate Charge (Typ 20nC) Improved d.
SW8N90 - N-channel TO-220F MOSFET
(SEMIPOWER)
SAMWIN
Features
■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typical 57nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
SW8N.
SW80N08A - MOSFET
(SEMIPOWER)
SAMWIN
SW80N08A
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max9.2mΩ)@VGS=10V ■ Gate Charge (Typical 82nC) ■ Improved dv.
SW80N08B - MOSFET
(SEMIPOWER)
SAMWIN
SW80N08B
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max8.5mΩ)@VGS=10V ■ Gate Charge (Typical 72nC) ■ Improved dv.
SW830 - N-Channel MOSFET
(SAMWIN)
..
SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.4.
SW830A - N-channel MOSFET
(SAMWIN)
SAMWIN
SW830A
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Improved dv/dt Capability ■ 100% .
SW840 - N-Channel MOSFET
(SAMWIN)
..
SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 0.8.
