SNM041R9DNBQ - Single N-channel Power MOSFET
The SNM041R9DNBQ is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit.
Standard Product SN
SNM041R9DNBQ Features
* Drain-Source Withstand Voltage: 40V
* Max. RDS(on) : 1.9mΩ @ VGS=10V
* Automotive applications
* AEC-Q101 Qualified
* Excellent ON resistance
* General footprint package PDFN5×6-8L
* 100% Rg and Avalanche tested PRODUCT APPEARANCE ： PDFN5×6-
