SNM041R9DNBQ

Single N-channel Power MOSFET

SNM041R9DNBQ Features

* Drain-Source Withstand Voltage: 40V

* Max. RDS(on) : 1.9mΩ @ VGS=10V

* Automotive applications

* AEC-Q101 Qualified

* Excellent ON resistance

* General footprint package PDFN5×6-8L

* 100% Rg and Avalanche tested PRODUCT APPEARANCE ： PDFN5×6-

SNM041R9DNBQ General Description

The SNM041R9DNBQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SN.

SNM041R9DNBQ Datasheet (601.77 KB)

SNM041R9DNBQ Datasheet Preview — Preview of SNM041R9DNBQ PDF

Datasheet Details

Part number:

SNM041R9DNBQ

Manufacturer:

SIT

File Size:

601.77 KB

Description:

Single n-channel power mosfet.

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SNM041R9DNBQ Single N-channel Power MOSFET SIT

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SNM041R9DNBQ Features

SNM041R9DNBQ General Description

Datasheet Details

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Description:

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