SNM067500EAQ - Single N-channel Power MOSFET
The SNM067500EAQ is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product SNM067500EAQ is in compliance
SNM067500EAQ Features
* Drain-Source Withstand Voltage: 60V
* Max. RDS(on) : 7.5mΩ @ VGS=10V 8.0mΩ @ VGS=4.5V
* HBM Class 2 (6)
* Automotive applications
* AEC-Q101 Qualified
* Excellent ON resistance
* Small package SOT-23
* Supper high density cell design
