SNM067500EAQ Datasheet - SIT

SNM067500EAQ Single N-channel Power MOSFET

The SNM067500EAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product SNM067500EAQ is in compliance .

SNM067500EAQ Features

* Drain-Source Withstand Voltage: 60V

* Max. RDS(on) : 7.5mΩ @ VGS=10V 8.0mΩ @ VGS=4.5V

* HBM Class 2 (6)

* Automotive applications

* AEC-Q101 Qualified

* Excellent ON resistance

* Small package SOT-23

* Supper high density cell design

SNM067500EAQ-SIT.pdf

SNM067500EAQ Datasheet Preview — Preview of SNM067500EAQ PDF

Datasheet Details

Part number:

SNM067500EAQ

Manufacturer:

SIT

File Size:

705.17 KB

Description:

Single n-channel power mosfet.

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SNM067500EAQ SNM067500EAQ Single N-channel Power MOSFET SIT

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