SNM067R9DNAQ - Single N-channel Power MOSFET
PRODUCT APPEARANCE ： PDFN5×6-8L The SNM067R9DNAQ is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in high performance automotive DC-DC conversion, power switch and cha
SNM067R9DNAQ Features
* Drain-Source Withstand Voltage: 60V
* Max. RDS(on) : 8.5mΩ @ VGS=-10V 13.3mΩ @ VGS=4.5V
* Automotive applications
* AEC-Q101 Qualified
* Excellent ON resistance
* General footprint package PDFN5×6-8L
* 100% Rg and Avalanche tested
* M
