SNM067R9DNAQ

Single N-channel Power MOSFET

SNM067R9DNAQ Features

* Drain-Source Withstand Voltage: 60V

* Max. RDS(on) : 8.5mΩ @ VGS=-10V 13.3mΩ @ VGS=4.5V

* Automotive applications

* AEC-Q101 Qualified

* Excellent ON resistance

* General footprint package PDFN5×6-8L

* 100% Rg and Avalanche tested

* M

SNM067R9DNAQ General Description

PRODUCT APPEARANCE ： PDFN5×6-8L The SNM067R9DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and cha.

SNM067R9DNAQ Datasheet (692.66 KB)

SNM067R9DNAQ Datasheet Preview — Preview of SNM067R9DNAQ PDF

Datasheet Details

Part number:

SNM067R9DNAQ

Manufacturer:

SIT

File Size:

692.66 KB

Description:

Single n-channel power mosfet.

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SNM067R9DNAQ Single N-channel Power MOSFET SIT

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SNM067R9DNAQ Features

SNM067R9DNAQ General Description

Datasheet Details

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Description:

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