SNM048R5DNAQ

Single N-channel Power MOSFET

SNM048R5DNAQ Features

* Drain-Source Withstand Voltage: 40V

* Max. RDS(on) : 8.5mΩ @ VGS=10V 13.0mΩ @ VGS=4.5V

* Automotive applications

* AEC-Q101 Qualified

* Excellent ON resistance

* General footprint package PDFN5×6-8L

* 100% Rg and Avalanche tested

* MS

SNM048R5DNAQ General Description

The SNM048R5DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SN.

SNM048R5DNAQ Datasheet (623.88 KB)

SNM048R5DNAQ Datasheet Preview — Preview of SNM048R5DNAQ PDF

Datasheet Details

Part number:

SNM048R5DNAQ

Manufacturer:

SIT

File Size:

623.88 KB

Description:

Single n-channel power mosfet.

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SNM048R5DNAQ Single N-channel Power MOSFET SIT

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SNM048R5DNAQ Features

SNM048R5DNAQ General Description

Datasheet Details

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Description:

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