SNM041R7DNAQ

Single N-channel Power MOSFET

SNM041R7DNAQ Features

* Drain-Source Withstand Voltage: 40V

* Max. RDS(on) : 1.7mΩ @ VGS=10V

* Automotive applications

* AEC-Q101 Qualified

* Excellent ON resistance

* General footprint package PDFN5×6-8L

* 100% Rg and Avalanche tested PRODUCT APPEARANCE ： PDFN5×6-

SNM041R7DNAQ General Description

The SNM041R7DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SN.

SNM041R7DNAQ Datasheet (777.08 KB)

SNM041R7DNAQ Datasheet Preview — Preview of SNM041R7DNAQ PDF

Datasheet Details

Part number:

SNM041R7DNAQ

Manufacturer:

SIT

File Size:

777.08 KB

Description:

Single n-channel power mosfet.

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SNM041R7DNAQ Single N-channel Power MOSFET SIT

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SNM041R7DNAQ Features

SNM041R7DNAQ General Description

Datasheet Details

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Description:

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