SNM041R4DNAQ Datasheet - SIT

SNM041R4DNAQ Single N-channel Power MOSFET

The SNM041R4DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SN.

SNM041R4DNAQ Features

* Drain-Source Withstand Voltage: 40V

* Max. RDS(on) : 1.4mΩ @ VGS=10V

* Automotive applications

* AEC-Q101 Qualified

* Excellent ON resistance

* General footprint package PDFN5×6-8L

* 100% Rg and Avalanche tested

* MSL1 PRODUCT APPEAR

SNM041R4DNAQ-SIT.pdf

SNM041R4DNAQ Datasheet Preview — Preview of SNM041R4DNAQ PDF

Datasheet Details

Part number:

SNM041R4DNAQ

Manufacturer:

SIT

File Size:

698.54 KB

Description:

Single n-channel power mosfet.

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SNM041R4DNAQ SNM041R4DNAQ Single N-channel Power MOSFET SIT

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