ESDA8V2-1J Datasheet - ST Microelectronics

EOS and ESD Transil protection

ESDA8V2-1J Features

* Breakdown voltage VBR = 8.2 V

* Unidirectional device

* High peak power dissipation: 500 W (8/20 µs waveform)

* ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge

* Low leakage current (< 0.5 µA @ 5 V) Benefits

* High EOS and ESD protection lev

ESDA8V2-1J General Description

The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages. TM: Transil is a trademark of STMicroelectronics August 2009 Doc ID 1.

ESDA8V2-1J Datasheet (132.50 KB)