MJE350
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Complemetary silicon power transistors. The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SO
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MJE350 - Medium Power PNP Transistors
(Multicomp)
MJE350
Medium Power PNP Transistors
Features:
ā¢ PNP Plastic Medium Power Silicon Transistor. ā¢ Designed for use Line-Operated Applications Such as Low.
MJE350 - 0.5 AMPERE POWER TRANSISTOR
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE350/D
Plastic Medium Power PNP Silicon Transistor
. . . designed for use in lineāop.
MJE350 - PNP Epitaxial Silicon Transistor
(Fairchild)
MJE350
MJE350
High Voltage General Purpose Applications
ā¢ High Collector-Emitter Breakdown Voltage ā¢ Suitable for Transformer ā¢ Complement to MJE340
.
MJE350 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION Ā·CollectorāEmitter Sustaining Voltage-
: VCEO(SUS) = -300 V(Min) Ā·DC Current Gain-
: hFE = -100(Min) @ I.
MJE350 - POWER TRANSISTOR
(Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 ā¢ Fax: (631) 435-1824
.
MJE350 - PNP EPITAXIAL SILICON POWER TRANSISTOR
(CDIL)
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL SILICON POWER TRANSISTOR
MJE350
TO126 Plasti.
MJE350 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
MJE350
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
TO-126F PNP ćSilicon PNP transistor in a TO-126F Plastic Package.
/ Features
VCEOļ¼ MJE340 ..
MJE350G - Plastic Medium-Power PNP Silicon Transistor
(ON Semiconductor)
MJE350G Plastic Medium-Power PNP Silicon Transistor
This device is designed for use in lineāoperated applications such as low power, lineāoperated ser.
MJE3055 - NPN SILICON POWER TRANSISTOR
(DIGITRON)
MJE3055
High-reliability discrete products and engineering services since 1977
NPN SILICON POWER TRANSISTOR
FEATURES ļ· Available as āHRā (high reli.
MJE3055 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
MJE3055
DESCRIPTION Ā·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) Ā·High DC Current Gain-
: hFE= 20-10.
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