P7NC80ZF - STP7NC80Z

ST Microelectronics

P7NC80ZF Datasheet Preview — Preview of P7NC80ZF PDF

Datasheet Details

Part number	P7NC80ZF
Manufacturer	STMicroelectronics ↗
File Size	438.20 KB
Description	STP7NC80Z
Datasheet	P7NC80ZF_STMicroelectronics.pdf

P7NC80ZF Product details

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP7NC80Z.

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Published: Nov 19, 2005 |