STB14NM50N Datasheet - ST Microelectronics

N-Channel MOSFET

STB14NM50N Features

* Order code VDS @ TJmax RDS(on) max ID STB14NM50N 550 V 0.32 Ω 12 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applications

* Switching applications Figure 1. Internal schematic diagram 'Ć7$%

* Descrip

STB14NM50N General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STB14NM50N Datasheet (1.06 MB)