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STB19NB20-1 Datasheet - ST Microelectronics

STB19NB20-1 N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptiona.

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Datasheet Details

Part number:

STB19NB20-1

Manufacturer:

STMicroelectronics ↗

File Size:

447.52 KB

Description:

N-channel enhancement mode powermesh mosfet.

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STB19NB20-1 STB19NB20-1 N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET ST Microelectronics

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