STP14NM50N Datasheet - ST Microelectronics

STP14NM50N Power MOSFETs

These devices are N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STP14NM50N Features

* 3 2 1 TO-220FP TAB TAB I2PAK 1 2 3 TO-220 3 2 1 Figure 1. Internal schematic diagram '7$%

* 6 $0Y Order codes STF14NM50N STI14NM50N STP14NM50N VDS @ TJmax RDS(on) max ID 550 V 0.32 Ω 12 A

* 100% avalanche tested

* Low input capacitance and gate ch

STP14NM50N Datasheet (1.24 MB)