STP140N4F6 Datasheet (STMicroelectronics)

STP140N4F6, N-Channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Order code STP140N4F6 Table 1: Device summary Marking Package 140N4F6 TO-220 Packing Tube August 2015

STP140N4F6 Features

* Obsolete Product(s) - Obsolete Product(s) Figure 1: Internal schematic diagram Order code STP140N4F6 VDS 40 V RDS(on) max. 4.3 mΩ ID 80 A PTOT 168 W

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss Applications

* Switc