STP7NB60FP Datasheet - ST Microelectronics

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STP7NB60FP General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

STP7NB60FP Datasheet (115.50 KB)

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STP7NB60FP

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STMicroelectronics ↗

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N - channel enhancement mode powermesh mosfet.
STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.2 Ω < 1.2 Ω I.

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STP7NB60FP General Description

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