STP8NC70Z

N - CHANNEL POWER MOSFET

ST Microelectronics

STP8NC70Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STP8NC70Z General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variet.

STP8NC70Z Datasheet (438.56 KB)

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Datasheet Details

Part number:

STP8NC70Z

Manufacturer:

STMicroelectronics ↗

File Size:

438.56 KB

Description:

N - channel power mosfet.
STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1 N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP8NC70.

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STP8NC70Z CHANNEL POWER MOSFET ST Microelectronics

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STP8NC70Z Features

STP8NC70Z General Description

Datasheet Details

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