11N6F Datasheet, Mosfet, STMicroelectronics

11N6F Features

• Mosfet Order code STL11N6F7 VDS 60 V RDS(on) max. 12 mΩ ID 11 A Features
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss

PDF File Details

Part number:

11N6F

Manufacturer:

STMicroelectronics ↗

File Size:

532.62kb

Download:

📄 Datasheet

Description:

N-channel power mosfet. This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate

11N6F Application

• Applications
• Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate

TAGS

11N6F

STMicroelectronics

📁 Related Datasheet

11N60 - N-Channel MOSFET (Fairchild Semiconductor)
FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f.

11N60C2 - Power Transistor (Infineon)
Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge .

11N60C3 - Power Transistor (Infineon Technologies)
SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av.

11N60E - FMV11N60E (Fuji Electric)
FMV11N60E Super FAP-E3 series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) ch.

11N60K-MT - N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 11N60K-MT Preliminary 11A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement .

11N60M6 - N-channel Power MOSFET (STMicroelectronics)
STD11N60M6 Datasheet N-channel 600 V, 500 mΩ typ., 8 A, MDmesh M6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01476v1_tab F.

11N60S5 - SPP11N60S5 (Infineon Technologies AG)
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.

11N65BS - N-Channel MOSFET (PINGWEI)
11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss.

11N65C3 - SPP11N65C3 (Infineon Technologies)
.. SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate.

11N65FJHD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
Silan Microelectronics SVS11N65FJHD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS11N65FJHD2 is an N-channel enha.