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11NB80 Datasheet - STMicroelectronics

11NB80 STW11NB80

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona.

11NB80 Datasheet (106.01 KB)

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11NB80 STW11NB80 STMicroelectronics

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