11NM65N Datasheet - STMicroelectronics

11NM65N - STD11NM65N

* 6 $0Y These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is ther.

11NM65N Features

* Order codes VDSS @ TJmax RDS(on) max ID STD11NM65N STF11NM65N STFI11NM65N STP11NM65N 710 V < 0.455 Ω 11 A

* 100% avalanche tested

* Low input capacitance and gate charge

* low gate input resistance Figure 1. Internal schematic diagram 'Ć7$% Applications

11NM65N-STMicroelectronics.pdf