* VCBO IC(max.) 60 V ESCC JANS 0.5 A 0.6 A
* Hermetic packages
* ESCC and JANS qualified
* Up to 100 krad(Si) low dose rate HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermet
2N2907AUB1 Datasheet (272.38 KB)
2N2907AUB1
272.38 KB
Pnp transistor.
2N2907AHR
Datasheet
Rad-hard 60 V, 0.6 A PNP transistor
3
1 2
LCC-3
3 4
1 2
UB
Pin 4 in UB is connected to the metallic lid.
C (3)
(2) B
E (1)
.
📁 Related Datasheet
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KďƐŽůĞƚĞ;ϮEϮϵϬϳhdy͕ϮEϮϵϬϳhdysͿ
Features: · ĞƌĂŵŝĐϯƉŝŶƐƵƌĨĂĐĞŵŽƵŶƚƉĂĐŬĂŐĞ;hEͿ · DŝŶ.
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2N2907A - PNP switching transistors
(NXP)
DISCRETE SEMICONDUCTORS
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M3D125
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Radiation Hardened PNP Silicon Switching Transistors
Features
• Qualified to MIL-PRF-19500/291 • Available in JA.
2N2907A - Transistors
(Diotec)
PN2907A / 2N2907A
PN2907A / 2N2907A
PNP
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(Microsemi Corporation)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //.microsemi.
PNP SM.
2N2907A - HIGH SPEED MEDIUM POWER PNP TRANSISTOR
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
SEME
2N2907A
HIGH SPEED MEDIUM POWER PNP SWITCHIN.
